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SUMMARY:Controlling Spinodal Decomposition of V1-xTixO2 for Memristor Devic
 es
LOCATION:Chemistry A101
TZID:America/Denver
DTSTART:20261002T160000
UID:2026-09-27-13-20-08@natsci.colostate.edu
DTSTAMP:20260927T132008
Description:About the seminar:\n\nThis proposed project aims to develop a n
 ew form of memory resistor (memristor) using the spinodal decomposition of
  V1-xTixO2. Memristors are poised to reduce the energy consumption of arti
 ficial intelligence models by modeling neurons in living things and bringi
 ng memory onto the CPU. This reduces the need to transfer information betw
 een\nthe RAM and the CPU and allows the computer to permanently learn. Mem
 ristors rely on materials with variable resistance to create a nonvolatile
  memory that mimics neurons by requiring different amounts of input for si
 gnals to pass. Many of these memristors are based on oxide materials like 
 TiO2 and VO2 which have issues of memory volatility and temperature contro
 l as they base their resistivity on the migration of oxygen vacancies and 
 the\nmetal-insulator transition (MIT). The oxygen vacancies can spontaneou
 sly migrate back into the bulk\, as a high concentration of vacancies is m
 etastable\, and the MIT of VO2 is at 68 °C\, which is difficult to compen
 sate for by cooling under heavy computational loads. By relying on a struc
 tural phase transition like spinodal decomposition which is more permanent
  and is not as sensitive to temperature fluctuations\, a longer lasting an
 d more robust memristor could be produced using the same materials. The ce
 ntral question is: How can the spinodal decomposition of V1-XTixO2 be cont
 rolled and then used in a memristor? We hypothesize that it is possible to
  control the spinodal decomposition by utilizing strain induced phase pref
 erence at the interface of an electrode and verifying the device works in 
 the predicted mechanism by SEM-EDS\, TEM-EELS and modeling. These methods 
 would show if the system\nwas instead operating via the oxygen vacancy mig
 ration. Modeling and variable temperature testing would show if the system
  was operating on the MIT. This may make a device based on spinodal decomp
 osition that can function as a memristor repeatably and more permanent\, b
 y relying on a phase change in the oxide. 4:00 pm
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