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SUMMARY:Quantifying Bandgap Renormalization and Interfacial Charge Transfer
  in 2D Semiconductors
LOCATION:Chemistry A101
TZID:America/Denver
DTSTART:20251202T160000
UID:2026-04-28-06-40-35@natsci.colostate.edu
DTSTAMP:20260428T064035
Description:About the seminar:\nTwo-dimensional (2D) transition metal dicha
 lcogenides (TMDCs) such as monolayer MoS2 exhibit strong excitonic effect
 s and tunable electronic states that make them promising materials for pho
 toelectrochemical energy conversion. In these atomically thin systems\, th
 e bandgap is not fixed but undergoes bandgap renormalization (BGR)\, shift
 ing the conduction (ECB) and valence (EVB) band edge positions\, in respon
 se to changes in carrier concentration and dielectric environment. This re
 search investigates how BGR is induced through screening effects and how B
 GR influences charge transfer across semiconductor|electrolyte interfaces\
 , thereby modulating electrochemical behavior.\n\nUsing in situ spectroe
 lectrochemistry and absorbance spectroscopy coupled with Mahan–Nozières
 –De Dominicis (MND) computational modeling\, excitonic features in monol
 ayer MoS2 were analyzed as functions of solvent dielectric constant and a
 pplied potential. Experimental results reveal that higher dielectric envir
 onments enhance exciton formation and suppress trion generation\, reducing
  the bandgap size through a smaller exciton binding energy in accordance w
 ith dielectric screening theory. Complementary experimental cyclic voltamm
 etry measurements show that more negative redox potentials and charge-equi
 libration processes induce bandgap narrowing\, increasing overlap between 
 ECB and acceptor electronic states in solution. Simulated cyclic voltammog
 rams confirm that energy level alignment amplifies current output. Collect
 ively\, this work elucidates the interplay between BGR\, dielectric screen
 ing\, and interfacial energetics in 2D semiconductors\, providing a mechan
 istic foundation for designing next-generation photocatalytic and photoele
 ctrochemical materials. 4:00 pm
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