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SUMMARY:An Optical Approach To Measure Band Energies Of Monolayer MoS2
LOCATION:Chemistry A101
TZID:America/Denver
DTSTART:20230208T160000
UID:2026-04-21-08-14-01@natsci.colostate.edu
DTSTAMP:20260421T081401
Description:An Optical Approach To Measure Band Energies Of Monolayer MoS2\
 n\nAbout the Seminar \n\nThis talk summarizes recent research results tow
 ard quantifying the energetics of monolayer (7 Å thick) molybdenum disulf
 ide (MoS2).  As a semiconducting 2-dimensional (2D) material\, MoS2 shows
  promise in energy conversion\, nanoelectronics\, and sensor applications.
   Interestingly\, electrostatic gating (i.e. applied voltages) tunes the 
 monolayer MoS2 band gap.  A central focus of this study is developing an 
 optical method to measure the dynamic band gap of MoS2.\n\nInterfacial ene
 rgetics at the semiconductor surface determine the reaction direction and 
 influence the electron transfer rate.  However\, existing approaches to q
 uantify interfacial energetics may not work if the band gap is not fixed. 
 Using monolayer MoS2 as an electrode in a redox environment\, we measure t
 he materials’ optical response to different electrostatic gating conditi
 ons.  These results\, supported by theory\, show that band edge movement 
 in monolayer MoS2 is significant (0.2-0.5 eV) over a narrow range of appli
 ed potentials (0.2-0.3 V). Such large band edge shifts could change chemic
 al reaction rates by orders of magnitude. 4:00 pm
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