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SUMMARY:Leveraging Tunable Defect Chemistry in Halide Semiconductors
LOCATION:Chemistry A101
TZID:America/Denver
DTSTART:20251028T160000
UID:2026-05-17-17-16-43@natsci.colostate.edu
DTSTAMP:20260517T171643
Description:About the seminar:\n\nCompared to conventional\, dopable semico
 nductors\, halide perovskite\nsemiconductors are uniquely defect tolerant 
 and maintain their optoelectronic properties\ndespite hosting intrinsic hi
 gh equilibrium defect concentrations. Optical bandgap and\nconductivity in
  iodide-based semiconductors are largely driven by the dominant\, low ener
 gy\niodide vacancy defect. The disruption in iodide bonding introduced by 
 these imperfections\nin the crystal structure leads to electronic states t
 hat may lie within the bandgap of the\nmaterial. The distance of these def
 ect states from band edges is acutely sensitive to iodide\nchemical potent
 ials during and after synthesis and is directly related to conductivity\nc
 hanges through defect mediated electronic equilibria. Thus\, changes in st
 ructural\ncomposition and external environment can strongly influence the 
 prevalence of iodide\nvacancies and related defects. Herein\, emphasis is 
 placed on the unique oƯ-gassing\nequilibrium that halide semiconductors c
 an undergo at modest temperatures.\nUnderstanding the nature of this halog
 en gas exchange is necessary to improve stability and\nperformance of hali
 de semiconductors. 4:00 pm
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