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SUMMARY:Measuring Layer Dependent Properties of 2-Dimensional Semiconductor
 s
LOCATION:Chemistry A101
TZID:America/Denver
DTSTART:20210929T160000
UID:2026-04-28-15-12-45@natsci.colostate.edu
DTSTAMP:20260428T151245
Description:Literature Seminar -\n\nOver the past 20 years\, 2-dimensional 
 (2D) material research exploded after the discovery of a simple and effect
 ive graphene preparation technique (so-called ‘Scotch tape method’). 
  Mere van der Waals forces hold together the stacked layers of the atomica
 lly thin 2D material.  Beyond graphene\, there are other 2D semiconductin
 g materials with promising new applications for energy conversion\, electr
 onics\, and catalysis.  Understanding the semiconductor’s “band gap
  is essential in making use of its electronic properties.  MoS2 is a wel
 l-studied archetype of 2D semiconducting materials with favorable electron
 ic\, physical\, and chemical properties.\n\nMoS2 behavior varies significa
 ntly from the bulk down to monolayer size\; this allows for thickness-depe
 ndent tunability.  Stacking layers of different 2D materials or introduci
 ng liquid at the surface also changes its electronic properties.  Combini
 ng modern techniques\, Du et. al. investigated physical and electronic pro
 perties of few-layer MoS2.1  The simultaneous in situ measurements with A
 tomic Force Microscopy (AFM) and Scanning Electrochemical Microscopy (SECM
 ) map the thickness (i.e. layer number) of MoS2 nanoflakes and provide inf
 ormation of electron transfer at the surface.  Finally\, the thickness-de
 pendent band energy levels are proposed at the semiconductor-liquid interf
 ace.  These studies focus on spatially mapping electronic properties of 2
 D semiconductors using electrochemistry and microscopy.\n\n\n\n&nbsp\;\n\n
 1 Du\, H.-Y.\; Huang\, Y.-F.\; Wong\, D.\; Tseng\, M.-F.\; Lee\, Y.-H.\; W
 ang\, C.-H.\; Lin\, C.-L.\; Hoffmann\, G.\; Chen\, K.-H.\; Chen\, L.-C. Na
 noscale Redox Mapping at the MoS2-Liquid Interface. Nat Commun 2021\, 12 (
 1)\, 1321. https://doi.org/10.1038/s41467-021-21660-z. 4:00 pm
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