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SUMMARY:Probing Nanoparticle Properties Using Defect-mediated Energy Transf
 er
LOCATION:Chemistry A101
TZID:America/Denver
DTSTART:20189101T000000
UID:2026-04-26-06-36-49@natsci.colostate.edu
DTSTAMP:20260426T063649
Description:Literature Seminar Abstract\n\nSemiconductor nanoparticles (NPs
 ) are used for a wide variety of applications\, including sensing\, photoc
 atalysis\, and optoelectronics. To optimize their utility for these applic
 ations\, charge carriers must be able to flow efficiently through the mate
 rial. However\, semiconductor NPs exhibit inherent structural and electron
 ic defects that can trap charge carriers and prevent them from being colle
 cted. Understanding the chemical nature of these defects is imperative in 
 order to implement these materials in devices. Defect-mediated energy tran
 sfer between a semiconductor NP and an acceptor molecule is a label-free m
 ethod that can be used to gain insight on the defect states in a material.
  Dayal and Burda demonstrated defect-mediated energy transfer between CdSe
  quantum dots (QDs) and phthalocyanine.1 They showed a non-linear dependen
 ce of energy transfer on spectral overlap and QD size\, and attributed it 
 to the presence of defect states within the quantum dots. They then altere
 d the surfaces of the CdSe QDs with ZnS shells and showed that passivated 
 QDs do not participate in defect-mediated energy transfer\, from which the
 y concluded the defects must be near the surface. The application of their
  findings could yield knowledge about the electronic structure and the flo
 w of charge carriers across a broad range of materials\, which can then be
  optimized for devices.\n\n(1)        Dayal\, S.\; Burda\, C. Surfac
 e Effects on Quantum Dot-Based Energy Transfer. J. Am. Chem. Soc. 2007\, 1
 29 (25)\, 7977–7981. 4:00 pm
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