About the Seminar: 

Understanding the bandgap diagram of semiconductor materials is crucial for predicting their ability to drive chemical reactions. A key parameter in constructing this diagram is the flatband potential, yet the current methods for measuring it show significant variability. This variability becomes particularly problematic as the field shifts toward more complex materials, which are inadequately described by the commonly used Mott-Schottky (MS) analysis. Comparative studies demonstrate that MS analysis often breaks down when applied to these advanced materials, indicating its limitations as a reliable method. Alternative approaches, such as chopped illumination, provide more precise flatband potential ranges but still display intra-experiment variability, with a degree of subjectivity in the determination. These findings suggest the need for multiple methods in a single experimental setup to ensure more accurate results.

Recent work, such as Wang et al.’s study on the potential of zero charge using the dropping pipette technique for metals, underscores the promise of exploring diverse electrochemical techniques. This talk will review existing methods, highlight their limitations, and address the growing need for additional measurement techniques.